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    2002 May 28 2 NXP Semiconductors Product data sheet High-speed switching diode BAS216 FEATURES ? Small ceramic SMD package ? High switching speed: max. 4 ns ? Continuous reverse voltage: max. 75 V ? Repetitive peak reverse voltage: max. 85 V ? Repetitive peak forward current: max. 500 mA. APPLICATIONS ? High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD110 very small rectangular ceramic SMD package. handbook, 4 columnsak MAM139 ka cathode mark top view side view bottom view Fig.1 Simplified outline (SOD110) and symbol. Marking code: A6. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage ? 85 V VR continuous reverse voltage ? 75 V IF continuous forward current note 1 ? 250 mA IFRM repetitive peak forward current ? 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 μs ? 4 A t = 1 ms ? 1 A t = 1 s ? 0.5 A Ptot total power dissipation Tamb = 25 °C; see Fig.2; note 1 ? 400 mW Tstg storage temperature ?65 +150 °C Tj junction temperature ? 150 °C |